Computation of Optical Response of GaAsSb/InGaAs Based Photo Detector
Authors
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Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP ,IN
Badan Singh -
Higher Colleges of Technology, PO Box-25026, Abu Dhabi ,AESandhya Kattayat
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Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP ,INChandravir Singh
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Department of Physics, Banasthali Vidyapith, Banasthali 304022, Rajasthan ,INP. A. Alvi
DOI:
https://doi.org/10.18311/jmmf/2023/33935Keywords:
GaAs, InAs, Optical Property, k.p Theory, Photo Detector.Abstract
In this paper, the calculations for determining the optical response of GaAsSb/InGaAs based photo detector have been performed and the results have been analysed successfully. The k.p model has been used to identify the behaviour of wave functions of the charge carriers and their discrete energy states. Finally, in optical response of the designed heterostructure, the optical absorption coefficient of the heterostructure has been computed. The computed results shows that the designed GaAsSb/InGaAs based heterostructure can be functional in designing the photodetectors operating in MIR (mid infrared) regions.
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