Study of Band Structures of GaAs and InAs Grown on Different Substrates
Authors
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Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP ,IN
Akhilesh Kumar -
Higher Colleges of Technology, PO Box 25026, Abu Dhabi ,AESandhya Kattayat
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Department of Physics, Government College, Kota- 324001, Rajasthan ,INH. K. Sublania
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University Centre for Research & Development, Department of Mechanical Engineering, Chandigarh University, Gharuan, Punjab ,INJasgurpreet Singh
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Department of Physics, Agra College, Dr. B. R. Ambedkar University, Agra 282001, UP ,INK. P. Tewari
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Department of Physics, Banasthali Vidyapith, Banasthali-304022, Rajasthan ,INP. A. Alvi
DOI:
https://doi.org/10.18311/jmmf/2023/33934Keywords:
GaAs, InAs, Band Structures, K.P Theory, Substrate.Abstract
In the early studies, thorough calculations for the band structures of binary and ternary semiconductor compounds have been performed. But in those studies the role of substrate, on which the studied compound is grown, has not been accounted. In this paper, the calculations for the band structures of technologically important binary semiconductors i.e. GaAs and InAs considering the effect of substrate have been performed and the results have been analysed successfully. In results, it has been shown that considering the lattice matched substrate with the grown semiconductor layers is very important for better device performance.
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